| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent generation of a charge gain by forming a nitride layer on sidewalls of a floating gate and a control gate. A semiconductor device includes a floating gate(17), an IPD(Inter Poly Dielectric)(19), a control gate(21), and a nitride layer(25). The IPD is formed on the floating gate. The control gate is formed on the IPD. A photosensitive layer is patterned to open a SAS(Self Aligned Source) region. A first etch process is performed to etch an isolation part by using the photosensitive layer. A semiconductor layer is exposed by the first etch process. Ions are implanted into the exposed semiconductor layer. A second etch process is performed to etch a damaged sidewall of the floating gate and a damaged sidewall of the control gate. The nitride layer is formed on the sidewall of the floating gate and the sidewall and an upper part of the control gate. The IPD is formed with an ONO(Oxide-Nitride-Oxide) layer.</p> |
