发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To improve a trimming efficiency to an output potential in a stepping-down circuit. SOLUTION: A semiconductor integrated circuit has a stepping-down circuit to generate an internal voltage (VDL) on receipt of a first and a second external voltages, a volatile storage circuit (31DR) connected to the stepping-down circuit to store data for regulating the voltage level of the internal voltage, a central processing unit (10) actuated in between the internal voltage and the second external voltage on receipt of the internal voltage and the second external voltage, and a nonvolatile storage device accessible by the central processing unit. The data stored in the nonvolatile storage device are read out in response to the initialization of the semiconductor integrated circuit. The volatile storage circuit stores the data read from the nonvolatile storage device in response to the initialization of the semiconductor integrated circuit. Accordingly, the internal voltage regulated by the data is supplied from the stepping-down circuit to the central processing unit. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009141960(A) 申请公布日期 2009.06.25
申请号 JP20080308580 申请日期 2008.12.03
申请人 RENESAS TECHNOLOGY CORP 发明人 HIRAKI MITSURU;YADORI SHOJI
分类号 H03K19/00;G11C29/04;H01L21/822;H01L21/8247;H01L27/04;H01L27/10;H01L27/115 主分类号 H03K19/00
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