| 摘要 |
The present invention provides a manufacturing method for an integrated circuit comprising a multi-layer stack and a corresponding integrated circuit. In the method a first layer is deposited on a substrate in a plasma deposition process in a plasma chamber using a first reaction gas having at least one first gas component which is introduced at a first flow rate into the chamber. Thereafter a second layer is deposited in situ on the first layer in the plasma deposition process in the plasma chamber using a second reaction gas having at least one second gas component which is introduced at a second flow rate into the chamber. In a switching transition period from the first to the second flow rate a transition layer including a gradual composition transition from the first to the second layer is formed.
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