SIC MATERIAL COMPRISING COMBINATION OF a-SIC AND ß-SIC AND TWO-PART PLASMA CHAMBER CATHODE MANUFACTURED USING THE SAME

摘要

Disclosed herein are a reaction-sintered SiC material amprising a combination of a-SiC and ß-SiC for use as semiconductor process parts and a preparation method thereof. The reaction-sintered SiC material is prepared by mixing carbon powder with a-SiC powder prepared by pressureless and pressure sintering to form a carbon/a-SiC mixture, and then allowing the mixture to react with molten silicon whose resistance has been controlled, at high temperature in a vacuum, thus preparing a ß-SiC material having resistance according to required electric properties. The reaction-sintered SiC material has electrical properties required in parts for semiconductor processes, along with excellent mechanical and chemical properties. The SiC material is characterized in that it is prepared in a rapid and inexpensive manner. Also disclosed is a two-part plasma chamber cathode, which is manufactured using said reaction-sintered SiC material and has a two-part structure of silicon and SiC. The two-part plasma chamber cathode has excellent electrical properties including high thermal conductivity and low resistance, and improved mechanical properties including durability and abrasion resistance.