METHOD OF FORMING A TRENCH AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a trench and a manufacturing method of a semiconductor device using the same are provided to form easily trenches having different depth values by using a polymer bonding process. A plurality of first patterns(104) and a plurality of second patterns(106) are formed on a substrate(100). The first patterns are separated in a first width from each other. The second patterns are separated in a second width from each other. The second width is larger than the first width. The substrate is etched by using the first and second patterns as etch masks. A first trench having a first depth value is formed. A second trench having a second depth value is formed. A gap between the first patterns is filled with a sacrificial layer. The substrate is etched by using the sacrificial layer, the first patterns, and the second patterns as etch masks. The second trench having a third depth value is formed. The third depth value is larger than the second depth value.