发明名称 Low Decomposition Storage of a Tantalum Precursor
摘要 Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
申请公布号 US2009163732(A1) 申请公布日期 2009.06.25
申请号 US20080340888 申请日期 2008.12.22
申请人 STAFFORD NATHAN;DUSSARRAT CHRISTIAN;LETESSIER OLIVIER;LAXMAN RAVI K 发明人 STAFFORD NATHAN;DUSSARRAT CHRISTIAN;LETESSIER OLIVIER;LAXMAN RAVI K.
分类号 C07F9/00 主分类号 C07F9/00
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