| 摘要 |
A semiconductor memory device overdriving for a predetermined period when sense amplifying a bitline. An overdriving control unit generates an overdriver enabling signal having an enabling period including a point to enable a bitline sense amplifier and a point to select a column. An overdriver provides an overdrive voltage of a level higher than that of a normal pull-up drive voltage to a pull-up node of the bitline sense amplifier in response to the overdriver enabling signal. The data line pair provides a sufficient difference in potential even for a tRCD_min condition by preventing a drop in the potential of the bitline using the overdrive operation when selecting a column.
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