| 摘要 |
Provided is a method of fabricating a semiconductor device with a dual damascene pattern. According to the method, a diffusion barrier layer, dielectric, a capping layer, and an organic bottom anti-reflection coating (BARC) are sequentially formed on a substrate where a metal interconnection is formed. A photoresist pattern on the organic BARC is formed and the organic BARC, the capping layer, and the dielectric are selectively etched to form a trench using the photoresist pattern as a mask. The photoresist pattern and the organic BARC are removed, and a byproduct capping mask is formed by reacting the capping layer with a reaction gas to form a byproduct. A portion of the trench is filled with the byproduct. Then, a via hole is formed in the trench using the byproduct capping mask as a mask, and the byproduct capping mask, the diffusion barrier layer, and the capping layer are removed.
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