发明名称 COUNTER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 A counter circuit of the semiconductor memory device is provided, which guarantees the stable output signal by controlling the pulse length of the input signal. A counter circuit comprises the input unit, the delay unit(520) and the shift transistor part(540). The input unit receives the outside lead command signal. The input unit synchronizes the outside lead command signal with the clock signal and outputs it. After the delay unit gives the fixed unit delay to the clock signal, it performs feedback in the input unit. The shift transistor part shifts the output signal of the input unit in multi-stage by the clock signal and outputs the inside lead command signal.
申请公布号 KR20090067799(A) 申请公布日期 2009.06.25
申请号 KR20070135579 申请日期 2007.12.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JOO, YONG SUK;CHO, JOO HWAN
分类号 G11C11/4063;G11C11/407;G11C11/4076;G11C11/4093 主分类号 G11C11/4063
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