| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element including a light emitting layer improved in the crystal growth thereof for ensuring an easier mass-production system, and also provide a method of manufacturing the light emitting element. <P>SOLUTION: The method of manufacturing the light emitting element is characterized by including steps of actualizing the crystal growth of a laminated layer on a first substrate formed of a group III-V compound semiconductor, including an easy etching layer adjacent to the first substrate and a light emitting layer formed of a nitride system semiconductor, joining a second substrate and the laminated layer, and separating the second substrate on which the light emitting layer is provided and the first substrate by removing the easy etching layer by a solution etching method or by removing the first substrate and the easy etching layer by a mechanical polishing method. <P>COPYRIGHT: (C)2009,JPO&INPIT |
