| 摘要 |
PURPOSE:To homogeneously provide a highly pure silicon carbide single crystal in good reproducibility by producing the silicon carbide single crystal using silicon carbide as a raw material by a molecular ray epitaxial growth method. CONSTITUTION:While a very small volume of argon gas is fed into a vacuum chamber 1 through a gas inlet, the volume of the fed gas and the vacuum- evacuating ability of a vacuum pump are controlled so as to give a vacuum degree of approximately 10<->Torr in the vacuum chamber 1. A molecular ray cell 6 for the silicon carbide of a raw material, a molecular ray cell for Si, and a holder for heating a substrate 4 are heated to approximately 2000 deg.C, approximately 1500 deg.C, and approximately 1800 deg.C, respectively. After the heating a shutter 14 is opened to start the growth of a silicon carbide single crystal on the silicon carbide substrate 4. After approximately 3hr the silicon carbide single crystal grows in a thickness of approximately 3 mm. In the case of the long time growth exceeding the approximately 3 hr growth, the strengths of Si2C, SiC2 and Si molecular rays relating to the Si among the molecular rays from the silicon carbide 5 of the raw material are analyzed, and when the analyzed strengths are low, a shutter 15 is opened to supply Si molecular rays, thereby providing the good growth layer. |
