| 摘要 |
A method for producing a film of vanadium pentoxide nanowires having improved alignment is provided. The method comprises the steps of a) preparing a solution of vanadium pentoxide (V2O5) nanowires by a sol-gel method; b) diluting the solution of vanadium pentoxide nanowires with water and feeding the dilute aqueous solution into a Langmuir-Blodgett trough; c) adding a dispersant to the dilute aqueous solution of vanadium pentoxide nanowires; d) diluting a solution of a dioctadecyldimethylammonium halide with an organic solvent, applying the dioctadecyldimethylammonium halide solution to the surface of the dilute aqueous solution of vanadium pentoxide nanowires in the Langmuir-Blodgett trough, and allowing the solutions to stand to disperse the dioctadecyldimethylammonium halide solution in the Langmuir-Blodgett trough; e) controlling the surface pressure of the dioctadecyldimethylammonium halide solution using barriers mounted on the Langmuir-Blodgett trough; f) affixing a substrate to a dipping arm of the Langmuir-Blodgett trough and bringing the substrate into contact with the surface of the dioctadecyldimethylammonium halide solution; and g) separating the substrate from the dipping arm. According to the method, the alignment of the nanowires can be markedly improved by sol-gel synthesis, the need for subsequent washing can be eliminated, which contributes to the simplification of the production process, and the nanowires can be cut to desired lengths in a simple manner, thereby ensuring the reproducibility of a device using the nanowire film and achieving improved characteristics of the device. Further provided are a vanadium pentoxide nanowire film produced by the method and a nanowire device comprising the nanowire film. The nanowire device can find application in various fields, including field effect transistors and a variety of sensors, due to its excellent characteristics and reproducibility.
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