| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose structure can be made compact while an H-bridge circuit is composed of four vertical transistors. <P>SOLUTION: In the semiconductor device in which a plurality of semiconductor chips having vertical transistors are mounted on a base and four vertical transistors constitute the H-bridge circuit, a semiconductor chip having a high-side vertical transistor is stacked and fixed on the base with a first adhesive member interposed and second electrodes of two vertical transistors are electrically connected through the first adhesive member and the base. Further, two semiconductor chips having low-side vertical transistors are stacked and fixed on the high-side semiconductor chip with a second adhesive member interposed while being opposed to a portion of the high-side semiconductor chip. A high-side firsts electrode and a low-side second electrode corresponding to the first electrode are electrically connected to each other through the second adhesive member. <P>COPYRIGHT: (C)2009,JPO&INPIT |
