| 摘要 |
PROBLEM TO BE SOLVED: To provide a vacuum processing technique capable of improving the throughput of the processing of a sample such as a wafer and improving the efficiency of the processing. SOLUTION: In the plasma processing apparatus provided with a vacuum container, a sample base 250 for mounting and holding a sample inside the vacuum container, a heat transmission gas supply means for supplying a heat transmission gas between the sample and the sample base, a gas supply means for supplying a processing gas into the vacuum container, a plasma generation means for supplying high frequency energy into the vacuum container and generating plasma, and an exhaust means for exhausting the gas inside the vacuum container, for performing the plasma processing to the sample, the sample base 250 has a dielectric film disposed on a sample mounting surface, an electrode for electrostatic adsorption insulated by the dielectric film, a push-up pin 301 for pushing up the outer peripheral edge of the sample disposed on the sample mounting surface, and a drive mechanism for driving the push-up pin. While generating the plasma by the plasma generation means, the push-up pin 301 is driven upwards and the sample is torn off from the outer peripheral edge side. COPYRIGHT: (C)2009,JPO&INPIT
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