| 摘要 |
A method for forming a non-salicide region and a salicide region of a semiconductor device is provided to separate the non-salicide region and the salicide region from each other without damage according to an etch process by eliminating wet and dry etch processes without using a separation film(oxide film). A photoresist is deposited on a salicide region in order to form a salicide(312) thereon. A patterning process is performed to pattern the salicide. A nitrogen injection process is performed to inject nitrogen into a non-salicide region(300) by using plasma after the patterning process. The photoresist is removed. A pre-cleaning process is performed to clean previously the salicide. A metal is deposited on the salicide region. The salicide is formed by performing a thermal process.
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