| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent a lens exfoliation effect due to moisture generated in an oxide layer micro-lens or a crack effect by adding an absorbing layer such as a silica gel to the oxide layer micro-lens using an oxide layer in order to absorb the moisture or chemicals from the inside of the oxide layer and to remove fully the moisture of the absorbing layer. A CMOS image sensor includes at least one or more optical sensing element(102), an interlayer dielectric(104), a protective film(106), a color filter layer(108), a planarization layer(110), a micro-lens(112), and an absorbing layer(114). The optical sensing element is formed on a semiconductor substrate(100). The interlayer dielectric and the protective layer are sequentially formed on an upper part of the semiconductor substrate including the optical sensing element. The color filter layer and the planarization layer are sequentially formed on an upper part of the protective layer. The micro-lens is formed on an upper part of the micro-lens. The micro-lens has a hemispherical shape. The absorbing layer is formed on an upper part of the micro-lens. The light penetrates the absorbing layer.
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