发明名称 Method of making high-purity (>99%) MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
摘要 <p>The invention relates to high purity MoO 2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO 2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO 2 and MoO 2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.</p>
申请公布号 EP2072469(A2) 申请公布日期 2009.06.24
申请号 EP20090151622 申请日期 2004.06.29
申请人 H.C. STARCK INC. 发明人 MCHUGH, LAWRENCE, F.;KUMAR, PRABHAT;MEENDERING, DAVID;WU, RICHARD;WOETTING, GERHARD
分类号 C01G39/02;H01B1/08;H01L33/42;H01L51/52;H05B33/14 主分类号 C01G39/02
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