| 摘要 |
<p>A photomask for improving uniformity of a line width of a pattern is provided to improve a CD(Critical Dimension) uniformity error in a dense pattern and a boundary by inserting a light-transmitting part into an outside of a main pattern region without a pattern. A photomask(200) includes a substrate, a main pattern region(210), a light shielding region(220), and a light-transmitting part(230). The main pattern region is formed in a center part of the substrate. A predetermined circuit pattern is arranged in the main pattern region. The light shielding area is arranged in the outside of the main pattern region. The light-transmitting part is arranged in a boundary of the main pattern region and the light shielding region. A phase shift pattern is arranged in the main pattern region. A shielding layer pattern is arranged on the phase shift pattern in the light shielding region.</p> |
