SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to reduce grain defects and grating defects in a cell region and a peripheral region by performing a partial CVD(Chemical Vapor Deposition) process after a SEG(Selective Epitaxy Growth) process in order to form a second active pattern and a second isolation pattern in the peripheral region. A first active pattern includes a first single crystalline semiconductor grown from a surface of a substrate(100) of a first region. A first isolation pattern is arranged on the first region in order to define the first active pattern. The first isolation pattern includes a first insulating material for insulating electrically the first active patterns from each other. A second active pattern includes a second single crystalline semiconductor which is grown from the surface of the substrate of a second region(120). A second isolation pattern is arranged on the second region in order to define the second active pattern. The second isolation pattern includes a second insulating material for insulating electrically the second active patterns from each other. The second isolation pattern has a lateral profile which is opposite to the lateral profile of the first insulating pattern.