发明名称 THIN FILM TRANSISTOR, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A thin film transistor, a display device including the same, and a manufacturing method of the same are provided to manufacture a plurality of thin film transistors having different properties on one substrate by using the same manufacturing method and the same equipment. A thin film transistor includes control electrodes(124a,124b), semiconductors(154a,154b), input electrodes(173a,173b), and output electrodes(175a,175b). The semiconductors are overlapped with the control electrodes. The input electrodes and the output electrodes are positioned at lower parts or upper parts of the semiconductors. The input electrodes and the output electrodes are opposite to each other. Each of the semiconductors includes a first part(155) and a second part(156). The first part is positioned between the input electrodes and the output electrodes. The first part includes polycrystalline silicon. The second part is connected to the first part. The second part is overlapped with the input electrodes or the output electrodes. The second part includes amorphous silicon.</p>
申请公布号 KR20090066069(A) 申请公布日期 2009.06.23
申请号 KR20070133679 申请日期 2007.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, SUNG HAENG;JEONG, KI HUN;SONG, JUN HO;KIM, JOO HAN;KIM, HYUNG JUN;SHIM, SEUNG HWAN
分类号 H01L29/786;G02F1/136 主分类号 H01L29/786
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