发明名称 Method and apparatus for dielectric etching during integrated circuit fabrication
摘要 A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transition between etching steps. Charge elimination occurs because the negative species is relatively higher at the beginning of plasma spiking and can reach the wafer surface to reduce the accumulated charge.
申请公布号 US7550390(B2) 申请公布日期 2009.06.23
申请号 US20060326031 申请日期 2006.01.04
申请人 MACRONIX INTERNATIONAL CO., LTD 发明人 LEE HONG-JI;LEE CHUN-HUNG;LIAN NAN-TSU
分类号 H01L21/461 主分类号 H01L21/461
代理机构 代理人
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