| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to improve a coupling ratio by simplifying a manufacturing process. A semiconductor device includes a floating gate(61), a control gate(63), and an IPD(Inter Poly Dielectrics)(65). The floating gate is formed on an upper surface of a semiconductor layer(69). An oxide layer(71) is formed between the semiconductor layer and the floating gate. An isolation part is formed in the semiconductor layer. The IPD is formed with an ONO(Oxide-Nitride-Oxide) layer. The IPD is formed at both sides of a bit line direction of the gate and at both sides of a word line direction of the gate. The control gate is formed on the IPD. The control gate is formed at both sides of the bit line of the IPD and at both sides of the word line direction of the IPD.</p> |
