发明名称 HETERO-JUNCTION SILICON SOLAR CELL AND FABRICATION METHOD THEREOF
摘要 A hetero-junction silicon solar cell and a manufacturing method thereof are provided to obtain high short-circuit current, a high filling rate, a rapid process time, and a low manufacturing cost by using an existing diffusion method. A hetero-junction solar cell is composed of a crystalline silicon substrate(201) and a passivation layer(203). The passivation layer is formed on an upper part of the crystalline silicon substrate. The passivation layer doped with impurities. The crystalline silicon substrate is formed with a p type crystalline silicon substrate and the impurities are composed of n type impurities. The crystalline silicon substrate is formed with an n type crystalline silicon substrate and the impurities are composed of p type impurities.
申请公布号 KR20090065895(A) 申请公布日期 2009.06.23
申请号 KR20070133437 申请日期 2007.12.18
申请人 LG ELECTRONICS INC. 发明人 KO, JI HOON;EO, YOUNG JOO;KIM, JIN AH;YUN, JU HWAN;JUNG, IL HYOUNG;KIM, JONG HWAN
分类号 H01L31/042 主分类号 H01L31/042
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