发明名称 |
HETERO-JUNCTION SILICON SOLAR CELL AND FABRICATION METHOD THEREOF |
摘要 |
A hetero-junction silicon solar cell and a manufacturing method thereof are provided to obtain high short-circuit current, a high filling rate, a rapid process time, and a low manufacturing cost by using an existing diffusion method. A hetero-junction solar cell is composed of a crystalline silicon substrate(201) and a passivation layer(203). The passivation layer is formed on an upper part of the crystalline silicon substrate. The passivation layer doped with impurities. The crystalline silicon substrate is formed with a p type crystalline silicon substrate and the impurities are composed of n type impurities. The crystalline silicon substrate is formed with an n type crystalline silicon substrate and the impurities are composed of p type impurities. |
申请公布号 |
KR20090065895(A) |
申请公布日期 |
2009.06.23 |
申请号 |
KR20070133437 |
申请日期 |
2007.12.18 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KO, JI HOON;EO, YOUNG JOO;KIM, JIN AH;YUN, JU HWAN;JUNG, IL HYOUNG;KIM, JONG HWAN |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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