发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
To obtain a semiconductor device and a method of manufacturing the same which can reduce influence of fluctuation in characteristic among transistors due to fluctuation in laser light irradiation number and laser light intensity on a semiconductor. There is provided a semiconductor device with plural pixels having transistors forming a matrix pattern, in which: the transistors have semiconductors crystallized by laser light irradiation; the semiconductors stretch over at least two pixels; the length of each of the semiconductors is longer than the pixel pitch of the pixels; and when the scan pitch of the laser light is given as M and the pixel pitch of the pixels is given as N, the semiconductors are irradiated with the laser light N/M times or more.
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申请公布号 |
US7316948(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20050155671 |
申请日期 |
2005.06.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KIMURA HAJIME;ANZAI AYA;YAMAZAKI SHUNPEI |
分类号 |
H01L21/84;H01L21/77;H01L27/12;H01L27/15;H01L27/32 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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