发明名称 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE HAVING THE THIN FILM TRANSISTOR AND DISPLAY APPARATUS HAVING THE THIN FILM TRANSISTOR SUBSTRATE
摘要 <p>A thin film transistor, a manufacturing method of the same, a thin film transistor having the same, and a display device having the same are provided to increase mobility of electrons in a channel formed along a low band gap part. A display device includes a first substrate(100), a second substrate(200), and a liquid crystal layer(300) in order to display images. The first substrate includes a plurality of thin film transistors and a plurality of pixel electrodes. The pixel electrodes are electrically connected with a part of the thin film transistors. The second substrate is arranged opposite to the first substrate. The second substrate includes color filters and common electrodes. The liquid crystal layer is inserted between the first substrate and the second substrate.</p>
申请公布号 KR20090065644(A) 申请公布日期 2009.06.23
申请号 KR20070133048 申请日期 2007.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, KAP SOO;YANG, SUNG HOON;KIM, SUNG RYUL;OH, HWA YEUL;CHOI, JAE HO;CHOI, YONG MO
分类号 H01L29/786 主分类号 H01L29/786
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