| 摘要 |
A capacitor of a semiconductor device and a manufacturing method thereof are provided to increase capacity of a capacitor by forming a capacitor of a laminated type inside the same dimension. A first capacitor bottom metal layer(141,142) and a first capacitor insulation layer(150) are arranged on a bottom interlayer insulation film of a semiconductor substrate(100). A first capacitor top metal layer(160), a first capping layer(170), and a top interlayer insulation film are arranged on the first capacitor insulation layer. A second capacitor bottom metal layer(260) is connected to the first capacitor top metal layer through the top interlayer insulation film and the first capping layer. A second capping layer(270) having an open hole is arranged on the top interlayer insulation film. A pad(280) is arranged on the second capping layer. A protective layer(290) is arranged on the second capping layer. A second capacitor top metal layer(300) is formed on the second capping layer. |
