| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention is related to technology for making semiconductor instruments and integrated circuits, in particular, to methods for etching of film dielectrics, from which silicon nitride is most widely used. Invention makes it possible to get even relief of profile in process of plasma-chemical etching of silicon nitride films with quite high speed and repeatability of process. In method of plasma chemical etching of silicon nitride films, gas phase components are Freon and oxygen at the following ratio of components: Freon : O2=7 l/hr : 0.6 l/hr at working pressure of P=205 Pa and speed of 355 nm/min. ^ EFFECT: makes it possible to get even relief of profile in process of plasma-chemical etching of silicon nitride films with quite high speed and repeatability of process. |
