| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a memory element that prevents degradation in characteristics due to high temperature annealing after formation of element, and can be applied as a multi-use memory device. SOLUTION: A high resistance layer 3A consisting of an oxide of a metal element, and an ion source layer 3B containing metal elements (Cu, Ag, Zn) becoming an ion source are provided in this order between a lower electrode 2 and an upper electrode 4. When the high resistance layer 3A is formed after the lower electrode 2, superfluous oxygen in the high resistance layer 3A is discharged by performing annealing at a temperature equal to or higher than the annealing temperature in subsequent annealing (after formation of element). An oxide of such an element as Ta, Hf, Si, Ni or Co, or an rare earth element (e.g., Gd or Ce) is employed in the high resistance layer 3A. Annealing may be performed after forming the lower electrode 2 and before forming the high resistance layer 3A. COPYRIGHT: (C)2009,JPO&INPIT
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