发明名称 COMPOSITION FOR FORMING METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM, SUBSTRATE HAVING METAL OXIDE-CONTAINING FILM FORMED THEREON, AND PATTERN FORMATION METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a composition for forming a metal oxide-containing film that forms a good pattern by using a metal oxide-containing intermediate film formed of the composition. <P>SOLUTION: The composition for forming a thermosetting metal oxide-containing film comprises (A) a metal oxide-containing compound obtained by hydrolytic condensation of a compound of formula (1) and a compound of formula (2), (B) a compound of formula (3) or (4), (C) an organic acid, and (D) an organic solvent. R<SP>1</SP><SB>m1</SB>R<SP>2</SP><SB>m2</SB>R<SP>3</SP><SB>m3</SB>Si(OR)<SB>(4-m1-m2-m3)</SB>(1). In the formula, R is an alkyl group; R<SP>1</SP>-R<SP>3</SP>are each H or a monovalent organic group; m1-m3 are each 0 or 1; and m1+m2+m3 is 0-3. U(OR<SP>4</SP>)<SB>m4</SB>(OR<SP>5</SP>)<SB>m5</SB>(2). In the formula, R<SP>4</SP>and R<SP>5</SP>are each an organic group; m4 and m5 are each an integer of at least 0; and U is a group III-V element of the periodic table. L<SB>a</SB>H<SB>b</SB>X (3). In the formula, L is Li, Na, K, Rb or Cs; X is a hydroxy group or an organic acid group; a is an integer of at least 1; b is 0 or an integer of at least 1; and a+b is a valence number of the hydroxy group or the organic acid group. M<SB>a</SB>H<SB>b</SB>A (4). In the formula, M is sulfonium, iodonium or ammonium; A is X or a non-nucleophilic counterion; a is an integer of at least 1; and b is 0 or an integer of at least 1. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009126940(A) 申请公布日期 2009.06.11
申请号 JP20070303130 申请日期 2007.11.22
申请人 SHIN ETSU CHEM CO LTD 发明人 OGIWARA TSUTOMU;UEDA TAKASHI;YANO TOSHIHARU;NAKAJIMA MUTSUO
分类号 C08L85/00;C08G79/00;C08K5/09;G03F7/11;G03F7/26;H01L21/027;H01L21/3065 主分类号 C08L85/00
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