| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device using strain technology and having good performance at a low cost. SOLUTION: Gate electrodes 15a, 15b are formed in an nMOS forming region 12a and a pMOS forming region 12b on a silicon substrate 10 respectively, a photoresist mask 18 is formed so as to cover the pMOS forming region 12b, the source/drain regions 17a of the nMOS is formed by ion implantation, and the gate electrode 15a is made amorphous. After removing the photoresist mask 18, a cap film 19 having tensile strain is formed on the silicon substrate 10 so as to cover the gate electrodes 15a, 15b, a photoresist mask 20 is formed so as to cover the nMOS forming region 12a, and ion plantation of impurities is applied to the cap film 19 of the pMOS forming region 12b. After removing the photoresist mask 20, annealing treatment is performed, and compressive strain is applied to a channel under the gate electrode 15a of the nMOS in the depth direction of the channel. COPYRIGHT: (C)2009,JPO&INPIT |
