| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a fin structure capable of suppressing both a gate capacitance and a gate resistance. SOLUTION: A semiconductor device 1 includes a semiconductor substrate 2, a plurality of fins 20 of a closed loop structure formed on the semiconductor substrate to be continuously connected to each other through a contact region, a gate contact region located at such a position as to be surrounded by the plurality of fins forming the closed loop structure on the semiconductor substrate, a plurality of gate electrodes formed to sandwich both-side surfaces of each of the fins through a gate insulating film and to be connected to the gate contact region, and a source/drain region included in regions of the region sandwiched by gate electrodes of the plurality of fins at their both sides and in the contact region. COPYRIGHT: (C)2009,JPO&INPIT
|
