发明名称 Memory Circuit with Decoupled Read and Write Bit Lines and Improved Write Stability
摘要 In a memory circuit, data from all cells along a selected word line is read. Then, the read data is written back to half-selected cells and new data is written to the selected cells in the next cycle. In cases where a READ bit line (RBL) and WRITE bit line (WBL) are decoupled, RBL and WBL can be accessed simultaneously. Hence, the WRITE in the n-th cycle can be delayed to the n+1-th cycle as far as there is no data hazard such as reading data from memory before correct data are actually written to memory. As a result, there is no bandwidth loss, although the latency of the WRITE operation increases. WRITE stability issues in previous configurations with decoupled RBL and WBL are thus addressed.
申请公布号 US2009147592(A1) 申请公布日期 2009.06.11
申请号 US20080329133 申请日期 2008.12.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 JOSHI RAJIV V.;KIM JAE-JOON;RAO RAHUL M.
分类号 G11C7/00 主分类号 G11C7/00
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