PHOTORESIST COMPOSITION FOR AN IMMERSION LITHOGRAPHY AND METHOD OF FORMING A PHOTORESIST PATTERN USING THE SAME

摘要

A photoresist composition for immersion lithography and a method for forming a photoresist pattern using the same are provided to drastically increase hydrophilicity in an exposure step. A photoresist composition for immersion lithography comprises a photosensitive polymer including an alicyclic functional group blocked with at least two cyclic acetal groups to a side chain; a photoacie generator; and organic solvent. The cyclic acetal group is represented by chemical formula 1. In chemical formula 1, R1 and R2 are independently hydrogen atom, C1-10 aliphatic functional group or aromatic functional group; Rx and Ry are independently hydrogen atom, C1-10 aliphatic functional group; and n is an integer of 1 ~ 10.