| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device configured to be made compact and highly integrated. SOLUTION: For example, an SRAM has gate electrodes 16 and 18 formed on an active region 22 not parallel, and a contact electrode 29 disposed between the gate electrodes 16 and 18 is disposed having its center positioned at a position where the interval between the gate electrodes 16 and 18 is wider than a center line C of the active region 22. Distances between the contact electrode 29 and gate electrodes 16 and 18 can be made larger than when the contact electrode 29 is disposed having its center on the center line C of the active region 22. While the contact electrode 29 and gate electrodes 16 and 18 can be arranged correspondingly closer to each other while held at predetermined distances, thereby reducing the extension-directional size of the active region 22. Other contact electrodes 24, 27, 28, and 30 to 33 are also similarly arranged to reduce the size of the SRAM. COPYRIGHT: (C)2009,JPO&INPIT
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