| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a MIM capacitor with advantages in water resistance and oxidation resistance even if formed between wiring layers. SOLUTION: The semiconductor device includes: a semiconductor substrate; a first insulating film 103 formed on the semiconductor substrate; a first wiring layer 101, which is embedded in the first insulating film 103; an interconnect cap film 105, which covers the first wiring layer 101; a MIM capacitor 114 formed on the interconnect cap film 105; a hydrogen shielding film 117, which covers over the MIM capacitor 114; a second insulating film 106 formed on the hydrogen shielding film 117; a conductor plug 119, which penetrates the second insulating film 106 and the hydrogen shielding film 117 and is connected respectively to an upper electrode 111 and a lower electrode 107 of the MIM capacitor 114; and a second wiring layer 121, which is connected to the conductor plug 119 and connected to the upper electrode 111 and the lower electrode 107 of the MIM capacitor 114, respectively. COPYRIGHT: (C)2009,JPO&INPIT
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