FILM FORMATION METHOD, FILM-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a film formation method for forming a film thinly while holding film quality by using a liquid raw material where an organic metal compound is dissolved to an organic solvent, to provide a film-forming apparatus for executing the film formation method, and to provide a method for manufacturing a semiconductor device having a ferroelectric film. SOLUTION: The film formation method includes: a process for generating source gas by vaporizing a solution where a metal organic compound is dissolved in an organic solvent; a process for generating source gas to which octane is added by adding vaporized octane to the source gas; and a process for forming a film including metal on a substrate by introducing the source gas to which octane is added into a film formation atmosphere. COPYRIGHT: (C)2009,JPO&INPIT