发明名称 ELECTROSTATIC PROTECTION CIRCUIT, AND SEMICONDUCTOR DEVICE EQUIPPED WITH THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit equipped with an SCR element having a high SCR trigger current only by the SCR element having a basic structure, without adding a new element. SOLUTION: The emitter and base of a PNP bipolar transistor 7 are connected to an anode terminal 5, and its collector is connected to the base of an NPN bipolar transistor 8. The emitter of the NPN bipolar transistor 8 is connected to a cathode terminal 6, its base is connected to the cathode terminal 6 through a resistance R1, and its collector is connected to the base of the PNP bipolar transistor 7 through a second resistance R2. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009130052(A) 申请公布日期 2009.06.11
申请号 JP20070301975 申请日期 2007.11.21
申请人 RICOH CO LTD 发明人 HASHIGAMI HIROYUKI
分类号 H01L21/822;H01L21/8222;H01L21/8234;H01L21/8248;H01L27/04;H01L27/06;H01L27/088;H01L29/74 主分类号 H01L21/822
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