CMOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a CMOS semiconductor device which includes an n-type MOSFET and a p-type MOSFET. The gate electrode of the n-type MOSFET is provided with a first insulating layer composed of a high-k material, and a first metal layer which is arranged on the first insulating layer and is composed of a metal material. The gate electrode of the p-type MOSFET is provided with a second insulating layer composed of a high-k material, and a second metal layer which is arranged on the second insulating layer and is composed of the metal material. The first insulating layer and the second insulating layer are composed of different high-k materials, and the first metal layer and the second metal layer are composed of the same metal material.