| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing manufacturing cost and constantly securing sufficient alignment accuracy in manufacturing the semiconductor device. SOLUTION: In the manufacturing method, a plurality of trenches for element isolation and a plurality of trenches for alignment mark are formed on a semiconductor substrate, an oxide film is laminated on the semiconductor substrate on which both of the trenches are formed, and the oxide film laminated on an active region and the approximately entire oxide film laminated inside the trenches for alignment mark are eliminated by etching using a resist mask for masking the trenches for element isolation. Then, a surface of the semiconductor substrate on which the oxide film is eliminated is polished to planarize the laminated oxide film which is remained on the trenches for element isolation, and the active region is isolated for each semiconductor element, and the resist mask is aligned to form the semiconductor element by using the trenches for alignment mark. COPYRIGHT: (C)2009,JPO&INPIT
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