METHOD FOR MANUFACTURING N-TYPE AND P-TYPE CHALCOGENIDE MATERIAL, DOPED HOMOJUNCTION CHALCOGENIDE THIN FILM TRANSISTER AND METHOD OF FABRICATING THE SAME

摘要

A method for manufacturing N-type and P-type chalcogenide material, a chalcogenide thin film transistor, and a manufacturing method thereof are provided to perform a process on a plastic substrate and to manufacture a thin film transistor at a low temperature process. A metal layer for a gate electrode is formed on a substrate(200) by a sputtering method. A gate electrode(204) is formed by patterning the metal layer through a photolithography process. A gate insulation layer(206) is formed on the gate electrode and the substrate. An amorphous chalcogenide layer is deposited on the gate insulation layer. A crystalline chalcogenide layer is formed by irradiating a laser on a top surface of the chalcogenide layer. A diffusion stop layer is deposited on the chalcogenide layer. A metal layer is formed on the diffusion stop layer. A contact hole is formed on a chalcogenide layer(220), a metal layer(216), and a gate insulation layer.