| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN substrate manufacturing method by which the variation of crystal axis in the surface is reduced, a GaN substrate, and a semiconductor device fabricated by using the GaN substrate. <P>SOLUTION: The GaN substrate 1 manufacturing method includes a step of processing the surface of a substrate 1 composed of a GaN single crystal into a concaved spherical shape, based on variations in orientations a<SB>0</SB>, a<SB>1</SB>of the crystallographic axes x<SB>0</SB>, x<SB>1</SB>across the substrate 1 surface. Processing the GaN substrate 1 surface into a concaved spherical shape reduces, in the GaN substrate 1 surface after processing, variations in orientations a<SB>0</SB>, a<SB>1</SB>of the crystallographic axes x<SB>0</SB>, x<SB>1</SB>with respect to a normals n<SB>0</SB>, n<SB>1</SB>. Furthermore, employing to manufacture semiconductor devices a GaN substrate 1 in which the variations in orientations a<SB>0</SB>, a<SB>1</SB>of the crystallographic axes x<SB>0</SB>, x<SB>1</SB>have been reduced makes it possible to uniformize in device characteristics a plurality of semiconductor devices fabricated from a single GaN substrate 1, which contributes to improving yields in manufacturing the semiconductor devices. <P>COPYRIGHT: (C)2009,JPO&INPIT |
