| 摘要 |
PROBLEM TO BE SOLVED: To provide techniques for shortening a rewriting time of data to a magnetic storage element. SOLUTION: When magnetic fields along an X axis, a Y axis and a Z axis are applied to a free layer of the magnetic storage element 1 storing "0" in combination according to a first magnetic field application sequence, magnetization LM on a lower-layer side of the free layer and magnetization UM on an upper-layer side of the free layer are inverted. When the magnetic fields along the X axis, Y axis and Z axis are applied to a free layer of a magnetic storage element storing "1" in combination according to a second magnetic field application sequence, the magnetization LM and the magnetization UM are inverted. Neither the magnetism LM nor the magnetism UM is inverted when the magnetic fields are applied to the free layer of the magnetic storage element 1 storing "0" according to the second magnetic field application sequence, and neither the magnetization LM nor the magnetization UM is inverted when the magnetic fields are applied to a free layer of a magnetic storage element 1 storing "1" according to the first magnetic field application sequence. COPYRIGHT: (C)2009,JPO&INPIT |
