| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which can control degradation in the characteristics of a ferroelectric capacitor during fabrication process, and to provide its fabrication process. SOLUTION: A ferroelectric memory device 100 comprises a substrate 12, a ferroelectric capacitor 50 formed above the substrate 12 and having a lower electrode layer 52, a ferroelectric layer 54 and an upper electrode layer 56, a first hydrogen barrier layer 58 covering the ferroelectric capacitor 50, an interlayer insulating layer 84 formed above the first hydrogen barrier layer 58, and a contact portion 60 connected with the upper electrode layer 56 while penetrating the interlayer insulating layer 84 and the first hydrogen barrier layer 58, wherein the contact portion 60 has a first barrier layer 62 touching the upper electrode layer 56, a second hydrogen barrier layer 64 formed above the first barrier layer 62, and a plug layer 68 formed above the second hydrogen barrier layer 64. COPYRIGHT: (C)2009,JPO&INPIT
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