| 摘要 |
A semiconductor memory device for reducing the length of a row direction of a bank is provided to minimize the area of the sub-word line driver formation area by arranging data input/output bus on the top of mat. A plurality of sub word lines is formed with the low direction of mat on the top of the mat(110). A plurality of sub word lines straps the metal wiring. A plurality of data input output buses(160) is formed with the column direction of mat on the top of mat. The control block is positioned at the edge of mat. The control block is made of sub word line control area, and the sense amp array domain and cross-domain. The sub word line control area is parallel positioned with the column direction of mat. The sense amp array domain is parallel positioned with the low direction of mat.
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