| 摘要 |
PROBLEM TO BE SOLVED: To position pieces of first and second wiring and a memory cell precisely. SOLUTION: A first wiring material is formed and a memory cell material for composing a memory cell is laminated on the first wiring material. A plurality of first parallel trenches extended in a first direction are formed in the laminated first wiring material, memory cell, and memory cell material, and first wiring 27 extended in the first direction and the memory cell material that is self-aligned to the first wiring 27 and is isolated by the first trench are formed. Then, a block body is formed while embedding an interlayer dielectric into the first trench. A second wiring material is laminated on the block body, a plurality of second parallel trenches are formed which extend in a second direction crossing the first direction and reach the first wiring 27 in depth, and then second wiring 36 extended in the second direction and memory cells 28-32 that are self-aligned to the second wiring 36 and isolated by the first and second trenchs are formed in the block body where the second wiring material is laminated. COPYRIGHT: (C)2009,JPO&INPIT |
