| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method with which a semiconductor crystal structure in a region opposed to a trench gate electrode can be strained in a device having an amorphous silicon layer formed. SOLUTION: The manufacturing method of the semiconductor device includes the processes of: preparing a semiconductor wafer 23 having a second semiconductor layer 24, containing second conductivity type impurities, laminated on the surface of a first semiconductor layer 22 containing first conductivity type impurities; forming a trench 8 penetrating the semiconductor layer 24 to reach the first semiconductor layer 22 from the surface of the second semiconductor layer 24 of the semiconductor wafer 23; forming amorphous silicon layers 12 and 26 on both top and reverse surfaces of the semiconductor wafer 23 until at least the trench 8 is filled; forming polycrystalline silicon layers 2 on both the top and reverse surfaces of the semiconductor wafer 23 coated with the amorphous silicon layers 12 and 26 and reforming the amorphous silicon layers 12 and 26 into polycrystalline silicon layers 12 and 26. COPYRIGHT: (C)2009,JPO&INPIT
|
