| 发明名称 |
Method of Fabricating an Integrated Circuit |
| 摘要 |
Embodiments of the invention relate to a method of fabricating an integrated circuit, including etching of a layer that includes a high k material in the form of a metal oxide composition, wherein an etchant is used that includes a silicon halogen composition.
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| 申请公布号 |
US2009149027(A1) |
申请公布日期 |
2009.06.11 |
| 申请号 |
US20070953550 |
申请日期 |
2007.12.10 |
| 申请人 |
KOEHLER DANIEL;HEITMANN JOHANNES;OBERT MICHAEL |
发明人 |
KOEHLER DANIEL;HEITMANN JOHANNES;OBERT MICHAEL |
| 分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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