发明名称 |
Dummy via for reducing proximity effect and method of using the same |
摘要 |
A dummy via design for a dual damascene structure has a dielectric layer on a substrate, a dual damascene structure filled with a conductive material and inlaid in the dielectric layer, and a dummy via structure filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at least two dummy vias filled with the non-conductive material and located adjacent to two sides of the dual damascene structure respectively.
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申请公布号 |
US7545045(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20050087863 |
申请日期 |
2005.03.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG KUN-CHENG;TSENG HUAN-CHI;YOU JHY-CHEN;LIU KUAN-MIAO;CHEN TSONG-YUAN;WANG CHIH-YANG;TSAI TIN-LIN;HUANG SSU-CHIA |
分类号 |
H01L29/40 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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