发明名称 MTJ read head with sidewall spacers
摘要 Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may protrude through the top surface of the oxide after CMP, the spacers serve to prevent possible later shorting to the stack.
申请公布号 US7544983(B2) 申请公布日期 2009.06.09
申请号 US20070825032 申请日期 2007.07.03
申请人 HEADWAY TECHNOLOGIES, INC.;APPLIED SPINTRONICS, INC. 发明人 YANG LIN
分类号 H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L29/76
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