| 摘要 |
A method for forming a gate in a semiconductor device are provided to maintain electrical property even if a device decrease by forming a gate of rounding type in manufacturing a semiconductor. A buffer gate silicon(206) is deposited on a semiconductor substrate(202), and a photoresist is deposited on the buffer gate silicone. The photoresist is deposited on a region where the gate electrode is formed, and the buffer gate silicon is etched as the rounding type by using a hydrofluoric acid (HF). A gate oxide layer is formed on the surface of the semiconductor substrate, and a poly-silicon(214) is deposited on the gate oxidation film.
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